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PD-95309A
IRF7324D1PBF
FETKYa MOSFET / Schottky Diode
l l l l l
Co-packaged HEXFET(R) Power MOSFET and Schottky Diode Ideal for Mobile Phone Applications Generation V Technology SO-8 Footprint Lead-Free
A A S G
1
8
K K D D
2
7
VDSS = -20V RDS(on) = 0.27 Schottky Vf = 0.39V
3
6
4
5
Top View
Description
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator applications. Generation 5 HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 package is designed for vapor phase, infrared or wave soldering techniques.
SO-8
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TA = 25C ID @ TA = 70C IDM PD @TA = 25C PD @TA = 70C dV/dt TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current
Max.
-20 12 -2.2 -1.8 -22 2.0
Units
V
f Power Dissipation f
Power Dissipation
c
A W
Peak Diode Recovery
d
1.3 -0.74 16 -55 to + 150 V/ns mW/C C
Linear Derating Factor Operating Junction and Storage Temperature Range
Thermal Resistance
RJL RJA
g Junction-to-Ambient fg
Junction-to-Drain Lead
Parameter
Typ.
--- ---
Max.
20 62.5
Units
C/W
Notes
through are on page 8
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1
12/06/04
IRF7324D1PBF
MOSFET Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter
BVDSS RDS(on) VGS(th) IDSS IGSS gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Drain-to-Source Breakdown Voltage Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
Min. Typ. Max. Units
-20 --- --- --- 0.155 0.270 --- 0.260 0.400 -0.70 --- --- --- --- -1.0 --- --- -25 --- --- 100 --- --- -100 2.4 --- --- --- 5.2 7.8 --- 0.88 --- --- 2.5 --- --- 10 --- --- 12 --- --- 11 --- --- 7.6 --- --- 260 --- --- 140 --- --- 70 --- V V A nA S nC
Conditions
VGS = 0V, ID = -250A VGS = -4.5V, ID = -1.2A VGS = -2.7V, ID = -0.6A VDS = VGS, ID = -250A VDS = -16V, VGS = 0V VDS = -16V, VGS = 0V, TJ = 125C VGS = -12V VGS = 12V VDS = -16V, ID = -2.2A ID = -2.2A VGS = -4.5V VDD = -16V VDD = -10V, VGS = -4.5V ID = -2.2A RG = 6.0 RD = 4.5 VGS = 0V VDS = -15V = 1.0MHz
e e
e
ns
pF
MOSFET Source-Drain Ratings and Characteristics
Parameter
IS ISM VSD trr Qrr Continuous Source Current Pulsed Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge
Min. Typ. Max. Units
--- --- --- --- --- --- --- --- 26 24 -2.2 -22 -1.2 39 36
Conditions
V ns nC
TJ = 25C, IS = -2.2A, VGS = 0V TJ = 25C, IF = -2.2A, VDD = -10V di/dt = 100A/s
e
e
Schottky Diode Maximum Ratings
IF(av) ISM Parameter Max. Average Forward current Max.Peak one cycle Non-repetitive Surge Current
Max. Units
1.7 1.2 120 11 A
Conditions 50% Duty Cycle Rectangular Wave, TA = 25C TA = 70C
5s sine or 3s Rect. Pulse 10ms sine or 6ms Rect. Pulse Following any rated load condition & with VRRM applied
Schottky Diode Electrical Specifications
VFM Parameter Max. Forward Voltage Drop
Max. Units
0.50 0.62 0.39 0.57 0.05 10 92 3600 V
IRM Ct dV/dt
Max. Reverse Leakage Current Max. Junction Capacitance Max. Voltage Rate of Charge
mA
Conditions IF = 1.0A, TJ = 25C IF = 2.0A, TJ = 25C IF = 1.0A, TJ = 125C IF = 2.0A, TJ = 125C VR = 20V
TJ = 25C TJ = 125C
pF VR = 5Vdc (100kHz to 1MHz) 25C V/s Rated VR
2
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IRF7324D1PBF
Power Mosfet Characteristics
1000
TOP
100
-ID, Drain-to-Source Current (A)
100
-ID, Drain-to-Source Current (A)
10
BOTTOM
VGS -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V -2.0V -1.5V
TOP
10
BOTTOM
VGS -7.5V -5.0V -4.0V -3.5V -3.0V -2.5V -2.0V -1.5V
1
1
0.1
-1.5V 60s PULSE WIDTH Tj = 25C
-1.5V
0.1
60s PULSE WIDTH Tj = 150C
1 10
0.01 0.1 1 10
0.1
-VDS, Drain-to-Source Voltage (V)
-VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
100.0
100.0
-ID, Drain-to-Source Current()
-ISD, Reverse Drain Current (A)
TJ = 25C
10.0
TJ = 150C
10.0
TJ = 150C
1.0
1.0
TJ = 25C
VDS = -10V
0.1 1.0 2.0 3.0 4.0
60s PULSE WIDTH
5.0 6.0 7.0
VGS = 0V
0.1 0.4 0.6 0.8 1.0 1.2 1.4 1.6
-VGS, Gate-to-Source Voltage (V)
-VSD , Source-to-Drain Voltage (V)
Fig 3. Typical Transfer Characteristics
Fig 4. Typical Source-Drain Diode Forward Voltage
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IRF7324D1PBF
Power Mosfet Characteristics
ID = -2.2A VGS = -4.5V
RDS ( on) , Drain-to-Source On Resistance ()
1.5
0.164
RDS(on) , Drain-to-Source On Resistance (Normalized)
VGS= - 4.5V
0.160
0.156
1.0
0.152
VGS= - 5.0V
0.148
0.144
0.5 -60 -40 -20 0 20 40 60 80 100 120 140 160
0.140 0.0 0.5 1.0 1.5 2.0 2.5 3.0
TJ , Junction Temperature (C)
-ID , Drain Current (A)
Fig 5. Normalized On-Resistance Vs. Temperature
Fig 6.
Typical On-Resistance Vs. Drain Current
( RDS (on), Drain-to -Source On Resistance )
0.4
100
ID = -2.2A
0.3
-ID, Drain-to-Source Current (A)
TJ = 25C
OPERATION IN THIS AREA LIMITED BY R DS(on)
100sec
10
0.2
1msec
0.1
0.0 2.0 4.0 6.0 8.0 10.0
Tc = 25C Tj = 150C Single Pulse
1 1 10
10msec
100
-VGS, Gate-to-Source Voltage (V)
-VDS , Drain-toSource Voltage (V)
Fig 7. Typical On-Resistance Vs. Gate Voltage
Fig 8. Maximum Safe Operating Area
4
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IRF7324D1PBF
Power Mosfet Characteristics
600 VGS = 0V, f = 1 MHZ Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd Coss = Cds + Cgd 400
12
-VGS, Gate-to-Source Voltage (V)
ID= -2.2A 10 8 6 4 2 0 VDS= -16V VDS= -10V
500
C, Capacitance (pF)
300
Ciss
200
Coss Crss
100
0 1 10 100
0
2
4
6
8
10
12
-VDS , Drain-to-Source Voltage (V)
QG Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage
100
Thermal Response (Z thJA )
D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 PDM
0.1 0.0001
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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IRF7324D1PBF
Schottky Diode Characteristics
10
100 10
TJ = 150C 125C 100C 75C 50C 25C
Reverse Current - IR (mA)
1 0.1 0.01 0.001
Instantaneous Forward Current - IF (A)
0.0001
1
)
0 4 8 12 16 20
TJ = 150C TJ = 125C TJ = 25C
Reverse Voltage - V R (V)
Fig. 13 - Typical Values of Reverse Current Vs. Reverse Voltage
0.1 0.0 0.2 0.4 0.6 0.8 1.0
Forward Voltage Drop - V FM (V) VFM (V) Forward Votage
Fig. 12 -Typical Forward Voltage Drop Characteristics
Fig.14 - Typical Junction capacitance Vs.Reverse Voltage
6
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IRF7324D1PBF SO-8 (Fetky) Package Outline
D A 5 B
(Dimensions are shown in millimeters (inches) )
DIM A b INCHES MIN .0532 .013 .0075 .189 .1497 MAX .0688 .0098 .020 .0098 .1968 .1574 MILLIMET ERS MIN 1.35 0.10 0.33 0.19 4.80 3.80 MAX 1.75 0.25 0.51 0.25 5.00 4.00
A1 .0040
6 E
8
7
6
5 H 0.25 [.010] A
c D E e e1 H K L y
1
2
3
4
.050 BAS IC .025 BAS IC .2284 .0099 .016 0 .2440 .0196 .050 8
1.27 BAS IC 0.635 BAS IC 5.80 0.25 0.40 0 6.20 0.50 1.27 8
6X
e
e1 A C 0.10 [.004] 8X b 0.25 [.010] A1 CAB y
K x 45
8X L 7
8X c
NOT ES : 1. DIMENS IONING & TOLERANCING PER AS ME Y14.5M-1994. 2. CONT ROLLING DIMENS ION: MILLIMETER 3. DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 4. OUT LINE CONFORMS T O JEDEC OUT LINE MS -012AA. 5 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.15 [.006]. 6 DIMENS ION DOES NOT INCLUDE MOLD PROT RUS IONS . MOLD PROT RUS IONS NOT T O EXCEED 0.25 [.010]. 7 DIMENS ION IS T HE LENGT H OF LEAD FOR S OLDERING T O A S UBS T RAT E. 3X 1.27 [.050]
FOOT PRINT 8X 0.72 [.028]
6.46 [.255]
8X 1.78 [.070]
SO-8 (Fetky) Part Marking Information
EXAMPLE: THIS IS AN IRF7807D1 (FETKY) DATE CODE (YWW) P = DISGNATES LEAD - FREE PRODUCT (OPTIONAL) Y = LAST DIGIT OF THE YEAR WW = WEEK A = ASSEMBLY SITE CODE LOT CODE PART NUMBER
INTERNATIONAL RECTIFIER LOGO
XXXX 807D1
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IRF7324D1PBF SO-8 (Fetky) Tape and Reel
Dimensions are shown in millimeters (inches)
TERMINAL NUMBER 1
12.3 ( .484 ) 11.7 ( .461 )
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00 (12.992) MAX.
14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes: Repetitive rating; pulse width limited by maximum junction temperature (see figure 11) ISD -2.2A, di/dt -96A/s, VDD V(BR)DSS, TJ 150C Pulse width 300s; duty cycle 2% Surface mounted on FR-4 board, steady-state R is measured at TJ of approximately 90C.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 12/04
8
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